Title:
非晶質フェリ磁性合金を使用してスピン偏極電流で書き込みを行なう磁気メモリ及びその書き込み方法
Document Type and Number:
Japanese Patent JP4954445
Kind Code:
B2
Abstract:
The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction ( 60 ), comprising: a magnetic layer, called trapped layer ( 61 ), whereof the magnetization is rigid; a magnetic layer, called free layer ( 63 ), whereof the magnetization may be inverse; and insulating layer ( 62 ), interposed between the free layer ( 73 ) and the trapped layer ( 71 ) and respectively in contact with said two layers. The free layer ( 63 ) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.
Inventors:
Nogel, Jean-Pierre
Lano, lauren
Conroux, Yang
Lano, lauren
Conroux, Yang
Application Number:
JP2003529474A
Publication Date:
June 13, 2012
Filing Date:
September 19, 2002
Export Citation:
Assignee:
Center National de la Recherche Scientific
International Classes:
G11C11/15; G11C11/16; H01F10/32; H01L21/8246; H01L27/105; H01L43/08; H01L43/10
Domestic Patent References:
| JP11238923A | ||||
| JP2001291911A | ||||
| JP2001196657A | ||||
| JP11213650A | ||||
| JP2001195878A | ||||
| JP2001156357A | ||||
| JP4023293A | ||||
| JP2000357828A | ||||
| JP10162326A | ||||
| JP2000285668A | ||||
| JP2000113666A | ||||
| JP6326263A |
Foreign References:
| EP1115164A2 | ||||
| US5695864 |
Attorney, Agent or Firm:
Nobuo Kono