To provide a magnetic memory capable of eliminating the need of a high current density for magnetization reversal, suppressing the decline of the thermal stability of magnetization and achieving a high recording density.

In the magnetic memory, the movable layer of a magnetic element is the 2-layer structure of a ferromagnetic layer and an oxide antiferromagnetic layer having an electromagnetic effect, and voltage induced magnetization reversal is used as an information input system. The method of manufacturing the magnetic memory using the voltage induced magnetization reversal as the information input system includes a Cr layer formation step of epitaxially growing and forming a threefold symmetry Cr(110) layer on an Au(111) layer and a Cr layer formation step of oxidizing the formed Cr(110) layer and forming a threefold symmetry Cr2O3(0001) layer as a method of forming the oxide antiferromagnetic layer.