To provide a magnetic random access memory providing the high integration of a cell, and its writing method.
A magnetic random access memory comprises: a first wiring BL extending in a first direction; a second wiring WL extending in a second direction intersecting with the first direction; a magnetic resistance effect element MTJ which is arranged on the intersection of the first and second wirings between the first and second wirings, which has one end connected to the first wiring, which has a fixation layer, a recording layer, and a non-magnetic layer provided between the fixation layer and the recording layer, and in which the film thickness of the fixation layer is thicker than the film thickness of the recording layer, the width of the fixation layer is wider than the width of the recording layer, and the magnetization direction of the recording layer is reversed by applying first current between the fixation layer and the recording layer; and a diode D which has one end connected to the other end of the magnetic resistance effect element, and the other end connected to the second wiring and which applies the first current only in one direction.
KISHI TATSUYA
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
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