Title:
MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL AND METHOD FOR WRITING AND READING MRAM CELL BY USING SELF REFERENCE READ OPERATION
Document Type and Number:
Japanese Patent JP2013093558
Kind Code:
A
Abstract:
To provide a magnetic random access memory (MRAM) having a magnetic tunnel junction.
A magnetic tunnel junction 2 consists of a synthetic storage layer 23, a sense layer 21 exhibiting reversible sense magnetization direction 211, and a tunnel barrier layer 22 between the sense layer and the storage layer. A net stray local magnetic field couples the storage layer with the sense layer. The net stray local magnetic field is a stray local magnetic field where the net stray local magnetic field coupled with the sense layer is less than 50 Oersted. A method of writing and reading an MRAM cell is also provided. The disclosed MRAM can be written and read with a lower power consumption when compared with a conventional MRAM.
Inventors:
LUCIAN RONBER
IOAN LUCIAN PREJBEANU
IOAN LUCIAN PREJBEANU
Application Number:
JP2012203976A
Publication Date:
May 16, 2013
Filing Date:
September 18, 2012
Export Citation:
Assignee:
CROCUS TECHNOLOGY SA
International Classes:
H01L21/8246; G11C11/15; H01L27/105; H01L29/82; H01L43/08
Domestic Patent References:
| JP2007508712A | 2007-04-05 | |||
| JP2003151263A | 2003-05-23 | |||
| JP2007053143A | 2007-03-01 | |||
| JP2007510305A | 2007-04-19 | |||
| JP2011023100A | 2011-02-03 |
Attorney, Agent or Firm:
Mitsufumi Esaki
Blacksmith
Kiyota Eisho
Blacksmith
Kiyota Eisho