To reduce a leakage magnetic field from a reference layer which works on a recording layer, and to reduce the insulation failure in a tunnel barrier layer.
A magnetic random access memory according to an embodiment comprises a plurality of magnetic resistance elements 10, each including: a recording layer 18 which has a magnetic anisotropy in a direction perpendicular to its film plane and is variable in the direction of magnetization; a reference layer 16 which has a magnetic anisotropy in a direction perpendicular to its film plane, and is invariable in the direction of magnetization; and a first non-magnetic layer 15 provided between the recording layer and the reference layer. The recording layer is provided for each magnetic resistance element, and is physically separated in every magnetic resistance element. The reference layer and the first non-magnetic layer uninterruptedly extend over the magnetic resistance elements.
SHIMOMURA NAOHARU
INABA TSUNEO
Takakura Shigeo
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori