Title:
磁気ランダムアクセスメモリ
Document Type and Number:
Japanese Patent JP4660249
Kind Code:
B2
Abstract:
A magnetic random access memory according to an example of the invention comprises a first reference bit line shared by first reference cells, a second reference bit line shared by second reference cells, a first driver-sinker to feed a first writing current, a second driver-sinker to feed a second writing current, and a control circuit which checks data stored in the first and second reference cells line by line, and executes writing simultaneously to all of the first and second reference cells by a uniaxial writing when the data is broken.
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| WO/1999/053499 | NON-VOLATILE STORAGE LATCH |
Inventors:
Shimizu
Tsuneo Inaba
Tsuneo Inaba
Application Number:
JP2005101390A
Publication Date:
March 30, 2011
Filing Date:
March 31, 2005
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G11C11/15; H01L21/8246; H01L27/105; H01L43/08
Domestic Patent References:
| JP2003257177A | ||||
| JP2004280892A |
Foreign References:
| US6512689 |
Attorney, Agent or Firm:
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto