Title:
スイッチング磁界が低減された磁気抵抗ランダムアクセスメモリ
Document Type and Number:
Japanese Patent JP2005530340
Kind Code:
A
Abstract:
A magnetoresistive tunneling junction memory cell (10) including a pinned ferromagnetic region (17) having a magnetic moment vector (47) fixed in a preferred direction in the absence of an applied magnetic field wherein the pinned ferromagnetic region has a magnetic fringing field (96), an electrically insulating material positioned on the pinned ferromagnetic region to form a magnetoresistive tunneling junction (16), and a free ferromagnetic region (15) having a magnetic moment vector (53) oriented in a position parallel or anti-parallel to that of the pinned ferromagnetic region wherein the magnetic fringing field is chosen to obtain a desired switching field.
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Inventors:
Engel, Bradley N.
Jane Ski, Jason Allen
Riso, Nicholas Di.
Jane Ski, Jason Allen
Riso, Nicholas Di.
Application Number:
JP2004514080A
Publication Date:
October 06, 2005
Filing Date:
June 04, 2003
Export Citation:
Assignee:
MOTOROLA INCORPORATED
International Classes:
G11C11/15; G11C11/16; H01F10/00; H01L21/8246; H01L27/105; H01L43/08; (IPC1-7): H01L27/105; G11C11/15; H01F10/00; H01L43/08
Domestic Patent References:
| JP2002520873A | 2002-07-09 |
Attorney, Agent or Firm:
Mamoru Kuwagaki