Title:
磁気記憶装置およびその製造方法
Document Type and Number:
Japanese Patent JP4247085
Kind Code:
B2
Abstract:
A magnetic memory device includes a memory cell which has a first wiring line composed of a first wiring layer, a second wiring line composed of a second wiring layer and provided above or below the first wiring line so as to cross the first wiring line, and a magnetoresistive effect element device provided in a position where the first wiring line and the second wiring line cross each other. The device further includes a peripheral circuit which includes a third wiring line provided around the memory cell and composed of the first wiring layer, a fourth wiring line provided above or below the third wiring line and composed of the second wiring layer, and at least one magnetic layer forming the magnetoresistive effect element device and provided between the third wiring line and the fourth wiring line.
Inventors:
Ken Kajiyama
Application Number:
JP2003337511A
Publication Date:
April 02, 2009
Filing Date:
September 29, 2003
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/8246; H01L27/10; H01L21/00; H01L21/8239; H01L27/105; H01L27/22; H01L43/08
Domestic Patent References:
| JP2004006713A | ||||
| JP2002359356A | ||||
| JP2002299575A | ||||
| JP2003243631A | ||||
| JP2004119478A |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto