Title:
強磁性トンネル接合素子を用いた磁気記憶装置
Document Type and Number:
Japanese Patent JP4063035
Kind Code:
B2
Abstract:
It is a task to provide a magnetic storage device of complementary type, of which reliability is improved by precisely performing writing storage data. In the present invention, therefore, in a magnetic storage device of complementary type for storing storage data contrary to each other in a first ferromagnetic tunnel junction element and a second ferromagnetic tunnel junction element, respectively, the first ferromagnetic tunnel junction element and the second ferromagnetic tunnel junction element are formed adjacently on a semiconductor substrate, first writing lines is wound around the first ferromagnetic tunnel junction element like a coil and the same time second writing lines is wound around the second ferromagnetic tunnel junction element like a coil, and in addition, a winding direction of the first writing lines and a winding direction of the second writing lines are reversed to each other.
Inventors:
Hiroshi Yoshihara
Moriyama victory
Hironobu Mori
Okazaki Shindo
Moriyama victory
Hironobu Mori
Okazaki Shindo
Application Number:
JP2002294356A
Publication Date:
March 19, 2008
Filing Date:
October 08, 2002
Export Citation:
Assignee:
ソニー株式会社
International Classes:
G11C11/15; H01L21/8246; H01L27/105; H01L27/22; H01L29/00; H01L43/08
Domestic Patent References:
| JP2003069107A | ||||
| JP2003174148A | ||||
| JP2002231904A | ||||
| JP10116489A | ||||
| JP2003229543A | ||||
| JP2002025245A | ||||
| JP10247382A | ||||
| JP6209075A |
Foreign References:
| US6191989 | ||||
| WO2002078100A1 |
Attorney, Agent or Firm:
Kenichiro Matsuo