Title:
MAGNETIC STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2019161179
Kind Code:
A
Abstract:
To provide a magnetic storage device capable of preventing degradation of retention characteristics of magnetoresistive effect element.SOLUTION: The magnetic storage device comprises a first memory cell including: a magnetoresistive effect element 25; a selector 23; and a first barrier member 24 arranged between the selector and the magnetoresistive effect element. The first barrier member has thermal conductivity of 5 W/mK or less. With this, the temperature is prevented from rising to the extent that data stored in the magnetoresistive effect element are inverted even when the selector SEL generates heat on the order of several hundred degrees Celsius.SELECTED DRAWING: Figure 6
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Inventors:
FURUHASHI HIRONOBU
Application Number:
JP2018049840A
Publication Date:
September 19, 2019
Filing Date:
March 16, 2018
Export Citation:
Assignee:
TOSHIBA MEMORY CORP
International Classes:
H01L21/8239; H01L27/105; H01L29/82; H01L43/08; H01L45/00
Attorney, Agent or Firm:
Kurata Masatoshi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken