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Title:
MAGNETIC STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2023044034
Kind Code:
A
Abstract:
To provide a magnetic storage device that has a high response speed.SOLUTION: A magnetic storage device according to an embodiment comprises: first wiring; second wiring; a memory cell; and a writing circuit. The memory cell is electrically connected between the first wiring and the second wiring, and includes a variable resistance element and a switching element. The writing circuit includes a current source circuit and a voltage source circuit, and supplies a writing voltage from the current source circuit or the voltage source circuit to write data in the memory cell. While a first voltage being a voltage lower than the writing voltage is applied to one of the first wiring and the second wiring, the writing circuit supplies the writing voltage to the other of the first wiring and the second wiring by using the voltage source circuit in a first period from a first time to start the supply of the writing voltage until a second time, and supplies the writing voltage by using the current source circuit in a second period from a third time being the time after the second time until a fourth time to stop the supply of the writing voltage.SELECTED DRAWING: Figure 11

Inventors:
KOBAYASHI YOSUKE
IWAYAMA MASAYOSHI
Application Number:
JP2021151861A
Publication Date:
March 30, 2023
Filing Date:
September 17, 2021
Export Citation:
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Assignee:
KIOXIA CORP
International Classes:
G11C13/00; G11C11/16; H10B61/00; H10N50/10
Attorney, Agent or Firm:
Patent Attorney Corporation Suzue Patent General Office



 
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