Title:
MAGNETO RESISTANCE EFFECT ELEMENT AND ITS BIAS APPLICATION METHOD
Document Type and Number:
Japanese Patent JP2701748
Kind Code:
B2
Abstract:
PURPOSE: To provide a magneto resistance effect element for obtaining a high- output and symmetrical signal reproduction waveform by properly applying a bias magnetic field to a magneto resistance effect film.
CONSTITUTION: When each coercive force of adjacent magnetic thin films 2a and 3a is set to Hc2 and Hc3 (0<Hc2<Hc3), respectively in an artificial lattice magneto resistance effect film (MR film), a bias magnetic field application mechanism is achieved and the magnetization direction of the coercive force in the magnetic thin film 3a of Hc3 is equal to the direction of the bias magnetic field to be applied to the magneto resistance effect film. As a result, by applying a bias magnetic field, the influence of static magnetic connection is canceled out and the symmetry of the reproduction waveform can be improved. Also, a similar effect can be obtained by using an artificial lattice magneto resistance effect film where an antiferromagnetic thin film is provided adjacently to one magnetic thin film which is adjacent via a non-magnetic thin film.
Inventors:
Kunihiko Ishihara
Yamamoto English
Kazuhiko Hayashi
Junichi Fujikata
Yamamoto English
Kazuhiko Hayashi
Junichi Fujikata
Application Number:
JP21247894A
Publication Date:
January 21, 1998
Filing Date:
September 06, 1994
Export Citation:
Assignee:
NEC
International Classes:
G11B5/39; H01F10/08; H01F10/32; H01L43/08; (IPC1-7): H01L43/08; G11B5/39; H01F10/08
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
Previous Patent: SYMBOL CLOCK CONTROLLER
Next Patent: FOLDING TYPE ELECTRONIC DEVICE WITH DISPLAY FUNCTION
Next Patent: FOLDING TYPE ELECTRONIC DEVICE WITH DISPLAY FUNCTION