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Title:
MAGNETO-RESISTANCE SENSOR
Document Type and Number:
Japanese Patent JP3624355
Kind Code:
B2
Abstract:

PURPOSE: To improve detection sensitivity by forming 1st and 2nd magnetic thin films while holding an antiferromagnetic thin film between them and forming 3rd and 4th magnetic thin films on the 1st magnetic thin film and under the 2nd magnetic thin film while interposing 1st and 2nd nonmagnetic thin films, respectively.
CONSTITUTION: The magnetization direction of 1st and 2nd magnetic thin films 3, 5 of NiFe, etc., disposed on and under an antiferromagnetic thin film 4 of FeMn is fixed in the magnetization direction of the antiferromagnetic thin film 4. Since 1st and 2nd nonmagnetic thin films 2, 6 of Cu, etc., are interposed between a 3rd magnetic thin film 1 of NiFe, etc., and the 1st magnetic thin film 3 and between a 4th magnetic thin film 7 of NiFe, etc., and the 2nd magnetic thin film 5, the magnetization direction of the 3rd and 4th magnetic thin films 2, 7 is not fixed by the magnetization direction of the antiferromagnetic thin film 4. Detection sensitivity can be improved by laminating plural basic structures each consisting of the thin films 1-7 on a substrate 8.


Inventors:
Hideyuki Kikuchi
Kazuo Kobayashi
Application Number:
JP1327394A
Publication Date:
March 02, 2005
Filing Date:
February 07, 1994
Export Citation:
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Assignee:
富士通株式会社
International Classes:
G01R33/09; G11B5/39; H01L43/08; (IPC1-7): G11B5/39; G01R33/09; H01L43/08
Domestic Patent References:
JP6267029A
JP5258248A
JP5347013A
Attorney, Agent or Firm:
Manabe Kiyoshi
Shoji Kashiwaya
Koichi Watanabe
Toshiro Ito