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Title:
MAGNETO RESISTIVE EFFECT HEAD
Document Type and Number:
Japanese Patent JP3827789
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To improve film characteristics such as soft magnetism and interlayer coupled magnetic field, etc., of a giant magnetoresistive effect film even on a magnetic shield layer consisting of a crystal soft magnetic film with large surface ruggedness, by making the central period of the surface ruggedness of the substrate surface of the giant magnetoresistive effect film having a sandwich film of a three layer structure within a specified range.
SOLUTION: The giant magnetoresistive effect film (GMR film) is formed on a lower side magnetic shield layer 13 through a lower side magnetic gap film 14. Then, the surface of the lower side magnetic gap film 14 becomes the substrate of the giant magneto resistive effect film 15, and even when the ruggedness of this surface is large, by properly controlling a film forming condition, etc., and making the central period L of the surface rugedness L>70nm, an effect of individual ruggedness for the giant magnetoresistive effect film 15 is reduced. The substrate surface of the giant magnetoresistive effect film 15 is preferred that the Rmax of the surface ruggedness is 5nm<Rmax≤50nm.


Inventors:
Kazuhiro Saito
Hiromi Fukuya
Hitoshi Iwasaki
Yuzo Ueguchi
Masashi Sahashi
Hiroaki Kawashima
Taro Oike
Koichi Terunuma
Haruyuki Morita
Application Number:
JP34977496A
Publication Date:
September 27, 2006
Filing Date:
December 27, 1996
Export Citation:
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Assignee:
Toshiba Corporation
tdk Corporation
International Classes:
G11B5/39; (IPC1-7): G11B5/39
Domestic Patent References:
JP8321644A
Attorney, Agent or Firm:
Saichi Suyama