MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC HEAD SLIDER, HEAD GIMBAL ASSEMBLY, AND HARD DISC DRIVE

Japanese Patent JP2012195560

A

To prevent oxidation of a magnetic layer adjacent to a spacer layer, and to obtain a large MR change rate.

The magnetoresistance effect element includes first and second magnetic layers L1, L2 having a relative angle of magnetization directions that changes in response to the external magnetic field, and a spacer layer 16 located between the first and second magnetic layers L1, L2. The first magnetic layer L1 is located on the side closer to a substrate on which the magnetoresistance effect element is formed than the second magnetic layer L2. The spacer layer 16 has a main spacer layer 16b containing gallium oxide as a main component, and a bottom layer 16a located between the main spacer layer 16b and the first magnetic layer L1, and containing partially oxidized copper as a main component.

JP5869405	Magnetic detector and magnetic sensor using it
JP2006139825	UNEXPOSED MAGNETO-RESISTANCE EFFECT TYPE THIN FILM MAGNETIC HEAD
WO/2004/109820	MAGNETIC TUNNEL JUNCTIONS INCORPORATING AMORPHOUS CoNbZr ALLOYS AND NANO-OXIDE LAYERS

KOIKE YUTO
CHO TSUTOMU
TSUCHIYA YOSHIHIRO
MATSUZAWA HIRONOBU

JP2011276757A

October 11, 2012

December 19, 2011

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TDK CORP

H01L43/10; G11B5/39; H01L43/08

JP2008130809A	2008-06-05
JP2009164579A	2009-07-23
JP2009060079A	2009-03-19
JP2010050297A	2010-03-04
JP2008004654A	2008-01-10
JP2002319722A	2002-10-31
JP2004172615A	2004-06-17
JP2008112880A	2008-05-15
JP2010044848A	2010-02-25
JPH08504303A	1996-05-07
JP2003086863A	2003-03-20
JP2008130809A	2008-06-05
JP2009164579A	2009-07-23
JP2009060079A	2009-03-19
JP2010050297A	2010-03-04
JP2008004654A	2008-01-10
JP2002319722A	2002-10-31
JP2004172615A	2004-06-17

US6359289B1

2002-03-19

宮崎 昭夫
石橋 政幸
緒方 雅昭

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