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Title:
MAGNETORESISTANCE EFFECT ELEMENT
Document Type and Number:
Japanese Patent JP06326375
Kind Code:
A
Abstract:

PURPOSE: To enable the much magnetoresistance effect making the most of the large magnetic moment of rare earth element to be gained by utilizing the resistance fluctuation of the rare earth element compound wherein the magnetic interaction between rare earth atoms are flustrated.

CONSTITUTION: A magnetic field is detected by the resistance of rare earth element compound wherein the magnetic interaction between rare earth atoms are fluctuated. At this time, the resistance fluctuation of rare earth element compound containing exceeding 20 atomic % of rare earth elements such as Ce, Pr, Cr, Mu, Cu, Au, etc., is utilized. In order to read out the resistance fluctuation, you have only to provide a pair of electrodes for checking the fluctuation in electric resistance by external magnetic field when the electrodes are fed with a current. Through these procedures, much magnetoresistance effect (MR effect) can be gained.


Inventors:
Saito, Akiko
Saito, Yoshiaki
Inomata, Koichiro
Mizoguchi, Tetsuhiko
Application Number:
JP1994000042137
Publication Date:
November 25, 1994
Filing Date:
March 14, 1994
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L43/08; G01R33/09; G11B5/39; H01F10/10; H01L43/10; H01L43/08; G01R33/06; G11B5/39; H01F10/10; H01L43/00; (IPC1-7): H01L43/08; H01L43/10