MAGNETORESISTANCE EFFECT ELEMENT

Title:

MAGNETORESISTANCE EFFECT ELEMENT

Document Type and Number:

Japanese Patent JP2005086061

Kind Code:

A

Abstract:

To obtain a magnetoresistance effect element high in reliability.

The magnetoresistance effect element high in reliability comprises a first magnetic film 8 with magnetism fixed therein, a second magnetic film 4b that contacts with and connects to the first magnetic film 8 via a narrow hole 15 provided in an insulating film and changes the magnetic north direction relative to the signal magnetic field, a third magnetic film 4a that is formed on the second magnetic film 4b facing the first magnetic film 8 across the insulating film and is higher than the second magnetic film 4b in terms of exchange stiffness constant, and electric current carrying means 2 and 12 that supply a sense current in a direction approximately vertical to the magnetic film surfaces.

Inventors:

OSAWA YUICHI
NAKAMURA SHIHO
HANEDA SHIGERU

Application Number:

JP2003317980A

Publication Date:

March 31, 2005

Filing Date:

September 10, 2003

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

G11B5/39; H01F10/14; H01F10/32; H01L43/08; (IPC1-7): H01L43/08; G11B5/39; H01F10/14; H01F10/32

Attorney, Agent or Firm:

Kenji Yoshitake
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki

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