Title:
MAGNETORESISTANCE EFFECT MATERIAL AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3021785
Kind Code:
B2
Abstract:
PURPOSE: To obtain a magnetoresistance material which can be manufactured, without using a high-cost ultrahigh vacuum evaporation apparatus, but using an ordinary sputtering apparatus requiring only two targets substantially, and which displays a large magnetoresistance effect at room temperature and by applying a practical magnetic field.
CONSTITUTION: A magnetoresistance effect material has a laminate structure, which includes magnetic thin-film Ni-Co layers 1, 1' of 10 to 100&angst thickness containing at least 50 atomic % nickel and a non-magnetic thin-film Cu layer 2 of 10 to 25&angst thickness. This laminate is made by sputtering. Thereby, it is possible to obtain a magnetoresistance material which can be manufactured by using only a binary sputtering apparatus and which displays a large magnetoresistance effect at room temperature and by applying a practical magnetic field.
Inventors:
Mitsuo Satomi
Hiroshi Sakakima
Hiroshi Sakakima
Application Number:
JP14847491A
Publication Date:
March 15, 2000
Filing Date:
June 20, 1991
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
C23C14/14; C23C14/34; G11B5/39; H01F10/08; H01F10/12; H01F10/32; H01F41/18; H01F41/30; H01L43/10; (IPC1-7): H01L43/08; G11B5/39; H01F10/16; H01F41/18; H01L43/12
Other References:
【文献】特許2830513(JP,B2)
【文献】特許2961914(JP,B2)
【文献】特許2961914(JP,B2)
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)