Title:
磁気抵抗効果素子及び磁気メモリ装置
Document Type and Number:
Japanese Patent JP4178867
Kind Code:
B2
Abstract:
A magnetoresistive effect element may be given satisfactory magnetic characteristics because a deterioration of a magnetoresistive changing rate by annealing can be suppressed and a magnetic memory device includes this magnetoresistive effect element to provide excellent write characteristics. A magnetoresistive effect element has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7 ) opposed to each other through an intermediate layer 6 to cause an electric current to flow in the direction perpendicular to the layer surface to obtain a magnetoresistive change. A magnetic memory device comprises the magnetoresistive effect element 1 in which at least one of the pair of ferromagnetic layers 5, 7 contains an amorphous ferromagnetic material whose crystallization temperature is higher than 623 K and bit lines and word lines sandwiching this magnetoresistive effect element and the magnetoresistive effect element in the thickness direction.
Inventors:
Kazuhiro Oba
Hiroshi Kano
Masatoshi Hosomi
Kazuhiro Bessho
Tetsuya Yamamoto
Tetsuya Mizuguchi
Hiroshi Kano
Masatoshi Hosomi
Kazuhiro Bessho
Tetsuya Yamamoto
Tetsuya Mizuguchi
Application Number:
JP2002226520A
Publication Date:
November 12, 2008
Filing Date:
August 02, 2002
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L43/08; G01R33/09; G11C11/15; G11C11/16; H01F10/13; H01F10/32; H01L21/8246; H01L27/105; H01L27/22; H01L43/10
Domestic Patent References:
| JP2002204004A | ||||
| JP8203035A | ||||
| JP11238924A | ||||
| JP2002208120A | ||||
| JP2002157711A |
Attorney, Agent or Firm:
Yoshitsuno Kakuda
Hitoshi Ito
Hitoshi Ito