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Title:
磁気抵抗効果素子及び磁気メモリ
Document Type and Number:
Japanese Patent JP5177585
Kind Code:
B2
Abstract:
According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.

Inventors:
Eiji Kitagawa
Daibo Tadaomi
Yutaka Hashimoto
Toko University
Kai Tadashi
Makoto Nagamine
Toshihiko Nagase
Katsuya Nishiyama
Koji Ueda
Hiroaki Yoda
Yakushiji Kei
Shinji Yuasa
Hitoshi Kubota
Taro Nagahama
Akio Fukushima
Ando Kouji
Application Number:
JP2010210180A
Publication Date:
April 03, 2013
Filing Date:
September 17, 2010
Export Citation:
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Assignee:
Toshiba Corporation
National Institute of Advanced Industrial Science and Technology
International Classes:
H01L21/8246; H01F10/14; H01F10/16; H01F10/32; H01L27/105; H01L43/08; H01L43/10
Domestic Patent References:
JP2009081216A
JP2011155073A
JP63019886A
Foreign References:
WO2010073790A1
Attorney, Agent or Firm:
Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Katsumura Hiro
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen



 
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