Title:
磁気抵抗素子及び磁気メモリ
Document Type and Number:
Japanese Patent JP5728311
Kind Code:
B2
Abstract:
According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first, second and third magnetic material films and a nonmagnetic material film are stacked. The first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film. The second magnetic material film has a Co concentration higher than that of the first magnetic material film.
Inventors:
Daisuke Watanabe
Katsuya Nishiyama
Toshihiko Nagase
Koji Ueda
Kai Tadashi
Katsuya Nishiyama
Toshihiko Nagase
Koji Ueda
Kai Tadashi
Application Number:
JP2011148444A
Publication Date:
June 03, 2015
Filing Date:
July 04, 2011
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/8246; H01L27/105; H01L29/82; H01L43/08; H01L43/10
Domestic Patent References:
| JP2009081216A | ||||
| JP2011071352A | ||||
| JP2012243933A |
Foreign References:
| WO2011036795A1 | ||||
| WO2010137679A1 |
Attorney, Agent or Firm:
Suzue International Patent Office