Title:
MAGNETORESISTIVE MEMORY ELEMENT AND MAGNETORESISTIVE MEMORY CIRCUIT
Document Type and Number:
Japanese Patent JP2018206891
Kind Code:
A
Abstract:
To provide a magnetoresistive memory element and a magnetoresistive memory circuit capable of suppressing loss of data even under heavy ion radiation environment.SOLUTION: A magnetoresistive memory element according to the present invention includes a first memory element and a second memory element each including a first magnetic layer whose magnetization direction is variable, a second magnetic layer whose magnetization direction is unchanged, and an insulating layer disposed between the first magnetic layer and the second magnetic layer and tunnel-connecting the first magnetic layer and the second magnetic layer, and a conductor that is connected to both the first magnetic layer of the first memory element and the first magnetic layer of the second memory element and that holds the magnetic flux.SELECTED DRAWING: Figure 1
Inventors:
KOBAYASHI DAISUKE
HIROSE KAZUYUKI
ITO TAICHI
KAKEHASHI TOMOYA
HIROSE KAZUYUKI
ITO TAICHI
KAKEHASHI TOMOYA
Application Number:
JP2017109264A
Publication Date:
December 27, 2018
Filing Date:
June 01, 2017
Export Citation:
Assignee:
NAT RES & DEVELOPMENT AGENCY JAPAN AEROSPACE EXPLORATION AGENCY
International Classes:
H01L21/8239; H01L27/105; H01L29/82; H01L43/08
Attorney, Agent or Firm:
Sumio Tanai
Hiroyuki Hashimoto
Hiroshi Yamaguchi
Takeo Okita
Norihiko Ara
Hiroyuki Hashimoto
Hiroshi Yamaguchi
Takeo Okita
Norihiko Ara