Title:
磁気抵抗素子および磁気メモリ
Document Type and Number:
Japanese Patent JP6411186
Kind Code:
B2
Abstract:
A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.
Inventors:
Shunpei Omine
Daibo Tadaomi
Yuji Kato
Naoki Hase
Junichi Ito
Daibo Tadaomi
Yuji Kato
Naoki Hase
Junichi Ito
Application Number:
JP2014234949A
Publication Date:
October 24, 2018
Filing Date:
November 19, 2014
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L43/08; H01F10/16; H01F10/30; H01F10/32; H01L21/8239; H01L27/105; H01L29/82; H01L43/10
Domestic Patent References:
| JP2012204683A | ||||
| JP2012221528A | ||||
| JP2013168197A | ||||
| JP2000268339A | ||||
| JP2013197406A | ||||
| JP2006344293A |
Attorney, Agent or Firm:
Takeshi Sekine
Hirohito Katsunuma
Suzuki Junsei
Hirohito Katsunuma
Suzuki Junsei