MAGNETOSTATIC WAVE ELEMENT

Japanese Patent JP3417000

B2

PURPOSE: To contrive to stabilize the characteristics of the magnetostatic wave element of an MSSW by a method wherein a magnetic single crystal thin film is formed in such a way that an axis of easy magnetization is generated in the same direction as that of an external magnetic field.
CONSTITUTION: A magnetostatic wave element 10 comprises a GGG single cyrstal substrate 12 having a garnet structure. A YIG single crystal thin film 14 having a garnet structure is formed on this GGG single crystal substrate 12. An external magnetic field 16 is applied to this thin film 14 in parallel to the face (011), which is the main surface of the thin film 14, and in parallel to an axial direction [OIT] of the thin film 14. Whereupon an axis of easy magnetization 18 of this thin film 14 is generated in the axial direction [0IT] in parallel to the external magnetic field 16. Moreover, a first transducer 20 for high-frequency signal input is formed on the thin film 14 at a prescribed angle (α) to the applied direction of the external magnetic field 16, that is, the axial direction 'OIT' of the thin film 14. This angle (α) is decided in consideration of the intensity the external magnetic field 16 to be applied and the magnitude and frequency of an input signal.

JPS60140707	MELTED COMPOSITION OF GARNET FILM FOR MAGNETIC BUBBLE MEMORY
JPS6057909	TEMPERATURE STABILIZED MAGNETIC BUBBLE COMPOSITION

Takashi Fujii
Satoru Shinmura
Yuu Fujino
Tsunobu Mizuno
Yutoku Sekishima
Osamu Chikakawa
Hiroshi Takagi

JP22972793A

June 16, 2003

August 03, 1993

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MURATA MANUFACTURING CO.,LTD.

H01F10/24; H01P1/215; H01P3/00; H01P9/00; H03H2/00; (IPC1-7): H01F10/24; H01P1/215; H01P3/00; H01P9/00

JP55143009A

Michihiro Okada

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