MAGNETRON SPUTTERING SYSTEM

Japanese Patent JP3544907

B2

PROBLEM TO BE SOLVED: To provide a magnetron sputtering system in which a vapor deposition rate is high, a multi-element thin film is deposited at a high speed, the composition control of the film is flexible, a denser multi-element thin film is easily covered at a high speed, and, moreover, maintenance is easy.
SOLUTION: Targets respectively composed of a target electrode 5 provided with magnets 6a and 6b and a target material 6 of the different kind or the same kind are made to be a set of two pieces, the targets and a supporting stand 22 mounted with a base material 2 are arranged so that a plane 11a connecting the supporting stand and the targets can be formed by the crossed line 7c between the surfaces 7a and 7b of the two pieces of targets and the central axis 10 of the supporting stand, the faces on the sides of the two target materials are respectively made gradient to the plane sides connecting the supporting stand and the targets, the same is arranged by one pair of several pairs, and the space between the targets is provided with an anode 12 having a positive potential to the target potential. Moreover, the rear of the target is provided with an electromagnet 9, and, furthermore, a shutter 4 capable of cutting-off the space between the target and a base material or between a heater 3 for base material heating and the base material is disposed.

Takanobu Hashimoto
Kenichi Sugai
Takayasu Sato
Ueda Shizuyo
Kanda Kazutaka

JP29458599A

July 21, 2004

October 15, 1999

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Fujikoshi Co., Ltd.

C23C14/34; C23C14/35; (IPC1-7): C23C14/34; C23C14/35

JP60013066A
JP6017248A

Junji Kawachi

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