Title:
MANUFACTURE OF AMORPHOUS SILICON SOLAR BATTERY
Document Type and Number:
Japanese Patent JPS6066478
Kind Code:
A
Abstract:
PURPOSE:To eliminate any unfavorable influence upon an amorphous silicon layer by a method wherein, when an amorphous silicon P layer is laminated, a high ordered silane gas is utilized as major material gas. CONSTITUTION:A transparent electrode 2 made of ITO, SnO2 etdc. is formed on a glass-made substrate 1 and then an amorphous silicon P layer 3 is formed by plasma CVD process. Next high ordered silane gas SinH2n+2 is added to increase the light transmittivity of the amorphous silicon P layer 3 without adding carbon so as to provide the layer 3 with window effect as well as to prevent any unfavorable influence upon another amorphous silicon I layer 4 formed on the P layer 3 from happening. Then the amorphous silicon I layer 4 and the other amorphous silicon N layer 5 are successively laminated by plasma CVD process and a metal such as aluminum etc. may be evaporated to form a backside electrode 6.
Inventors:
MATSUDA HIROSHI
HATAKE YASUHIKO
HATAKE YASUHIKO
Application Number:
JP17322883A
Publication Date:
April 16, 1985
Filing Date:
September 21, 1983
Export Citation:
Assignee:
KOMATSU MFG CO LTD
International Classes:
H01L31/04; H01L31/06; H01L31/075; H01L31/18; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Yonehara Masaaki