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Title:
MANUFACTURE OF ATOMIC LAYER MASK
Document Type and Number:
Japanese Patent JPH06326040
Kind Code:
A
Abstract:

PURPOSE: To form an extremely thin mask having crystallizability controlled in atomic accuracy by alternately supplying a group III raw material gaseous or a group II gaseous raw material and a group V gaseous raw material or a group VI gaseous raw material having a self-stop mechanism in the mask forming method of selective growth.

CONSTITUTION: A device is composed of gallium trimethyl 1 as a group III raw material, zinc dimethyl 2 as a group II raw material, arsine 3 as a group V raw material, hydrogen sulfide 4 as a group VI raw material, a heater 5 for heating a substrate, the substrate 6 to be grown and a scanning tunnel microscope 7 used for mask machining and observation. The formation method of the atomic layer mask of ZnS as a group II-VI compound is explained as an example. The upper section of the substrate 6 to be grown is supplied with zinc dimethyl 2 for one sec. Zinc dimethyl reaching on the substrate is decomposed partially, and adsorbed onto a substrate surface. Even when zinc dimethyl further flies on the adsorbed molecules, zinc dimethyl is not adsorbed. Hydrogen sulfide 4 is fed for one sec. The ZnS of monomolecular layer is formed by the sequence.


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Inventors:
Yokoyama, Haruki
Inoue, Naohisa
Tanimoto, Masabumi
Katsuta, Kenji
Shinohara, Masanori
Application Number:
JP1993000139041
Publication Date:
November 25, 1994
Filing Date:
May 17, 1993
Export Citation:
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Assignee:
NIPPON TELEGR & TELEPH CORP
International Classes:
G03F1/62; H01L21/205; (IPC1-7): H01L21/205; G03F1/14
Attorney, Agent or Firm:
高山 敏夫 (外1名)



 
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