PURPOSE: To form an extremely thin mask having crystallizability controlled in atomic accuracy by alternately supplying a group III raw material gaseous or a group II gaseous raw material and a group V gaseous raw material or a group VI gaseous raw material having a self-stop mechanism in the mask forming method of selective growth.
CONSTITUTION: A device is composed of gallium trimethyl 1 as a group III raw material, zinc dimethyl 2 as a group II raw material, arsine 3 as a group V raw material, hydrogen sulfide 4 as a group VI raw material, a heater 5 for heating a substrate, the substrate 6 to be grown and a scanning tunnel microscope 7 used for mask machining and observation. The formation method of the atomic layer mask of ZnS as a group II-VI compound is explained as an example. The upper section of the substrate 6 to be grown is supplied with zinc dimethyl 2 for one sec. Zinc dimethyl reaching on the substrate is decomposed partially, and adsorbed onto a substrate surface. Even when zinc dimethyl further flies on the adsorbed molecules, zinc dimethyl is not adsorbed. Hydrogen sulfide 4 is fed for one sec. The ZnS of monomolecular layer is formed by the sequence.
INOUE NAOHISA
TANIMOTO MASABUMI
KATSUTA KENJI
SHINOHARA MASANORI
