Title:
MANUFACTURE OF BIPOLAR TRANSISTOR TOLERANT OF REVERSE VOLTAGE
Document Type and Number:
Japanese Patent JP3042036
Kind Code:
B2
Abstract:
PURPOSE: To manufacture a bipolar transistor(TR), included in an integrated circuit consisting of a bipolar TR and a MOS TR.
CONSTITUTION: A highly-doped region 23 is formed in a low-doped region 21 in the emitter region of this bipolar TR. A 2nd region is determined by a 1st region by using a spacer 22. This bipolar TR is tolerant of a reverse voltage, without generating gain decreases.
Inventors:
Jean Jimene
Application Number:
JP16516991A
Publication Date:
May 15, 2000
Filing Date:
June 11, 1991
Export Citation:
Assignee:
STMicroelectronics Society Anonymous
International Classes:
H01L27/06; H01L21/331; H01L21/8222; H01L21/8248; H01L21/8249; H01L29/08; H01L29/73; H01L29/732; (IPC1-7): H01L21/8249; H01L21/331; H01L21/8222; H01L27/06; H01L29/73
Domestic Patent References:
| JP2283032A | ||||
| JP2181933A | ||||
| JP62272567A | ||||
| JP6245065A |
Attorney, Agent or Firm:
Keiichi Yamamoto