Title:
MANUFACTURE OF CAPACITOR DIELECTRIC FILM IN SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPH07335768
Kind Code:
A
Abstract:
PURPOSE: To eliminate anomalous oxidation in forming a thinner silicon oxide film in manufacture of a multilayer structure of a silicon nitride film and a silicon oxide film used as a capacitor dielectric film in a semiconductor element, particularly, DRAM.
CONSTITUTION: After a silicon nitride film 3 is formed on a lower electrode 2, the silicon nitride film 3 is rapidly heated in an N2O atmosphere, thus forming a silicon oxide nitride film 4. Alternatively, after a silicon oxide film is formed on a silicon nitride film-by oxidation with dry O2 a silicon oxide nitride film is formed on the oxide film.
Inventors:
KUROKI HIROKI
YOSHIMARU MASAKI
YOSHIMARU MASAKI
Application Number:
JP12642394A
Publication Date:
December 22, 1995
Filing Date:
June 08, 1994
Export Citation:
Assignee:
MIYAZAKI OKI DENKI KK
OKI ELECTRIC IND CO LTD
OKI ELECTRIC IND CO LTD
International Classes:
H01L27/04; H01L21/318; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L21/8242; H01L27/108; H01L21/318; H01L27/04; H01L21/822
Attorney, Agent or Firm:
Toshiaki Suzuki
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