PURPOSE: To obtain a capacitor device which is capable of forming a ferroelectric thin film having a good crystallinity as a capacitor insulation film by raising and dropping the temperature dramatically by scanning an energy beam or providing the beam in a pulse-like manner and crystallizing the ferroelectric thin film dramatically.
CONSTITUTION: A first TiN film 12 is formed selectively or across the board on one surface of a support board 11 on which an integrated circuit or the like is loaded. A ferroelectric thin film TiO3 13 (Ba, Sr1-x) is formed on the surface of the first TiN film. The energy beam whose wavelength is lower than 310nm is emitted to the surface of the ferroelectric thin film where the thin film is annealed at a temperature of 100° or above so as to crystallize. Then, a second TiN film 16 is formed selectively or across the-board on the crystallized ferroelectric thin film 15. This construction makes it possible to form a ferroelectric thin film having high quality crystallinity at a low temperature.
OTSUKI TATSUO
NASU TORU
SHIMADA YASUHIRO
UEMOTO YASUHIRO
HAYASHI SHINICHIRO
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