Title:
MANUFACTURE OF CHALCOPYRITE THIN FILM
Document Type and Number:
Japanese Patent JPH05335350
Kind Code:
A
Abstract:
PURPOSE: To manufacture a thin film of In without fluctuation in composition even from the microscopic viewpoint by forming a flat film without unevenness, in the manufacturing method to form a stacked film of Cu/In on a substrate and a chalocopyrite thin film with processing under the chalcogen atmosphere or with solid phase reaction with chalcogen thin film.
CONSTITUTION: A method of manufacturing a chalcopyrite thin film comprises steps for forming a Cu thin film 3 on a substrate 1, forming an In thin film 4 by vacuum evaporation while the Cu thin film on the substrate 1 is being irradiated with accelerated ion and conducting the heat processing in the chalcogen vapor or gas atmosphere including chalcogen.
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Inventors:
NISHITANI MIKIHIKO
NEGAMI TAKAYUKI
WADA TAKAHIRO
HIRAO TAKASHI
NEGAMI TAKAYUKI
WADA TAKAHIRO
HIRAO TAKASHI
Application Number:
JP14239392A
Publication Date:
December 17, 1993
Filing Date:
June 03, 1992
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/265; C30B23/02; C30B29/46; H01L21/205; H01L21/28; H01L21/285; H01L21/363; H01L21/368; (IPC1-7): H01L21/368; H01L21/205; H01L21/265; H01L21/285
Attorney, Agent or Firm:
Akira Kobiji (2 outside)