Title:
MANUFACTURE OF CIRCULAR GALLIUM ARSENIDE WAFER
Document Type and Number:
Japanese Patent JPS56105638
Kind Code:
A
Abstract:
PURPOSE:To obtain the wafer having rare dislocation by a method wherein a semicylindrical ingot being the direction of the intersectional line of the perpendicular face against the face of crystal growth and the flat face lies in the <110> direction is cut at the face (100) or at the plane inclining at 0.5-5 degrees, and the triangular post obtained by piling the triangular wafer is ground to be a cylinder. CONSTITUTION:The semicylindrical ingot of GaAs single crystal is so made as the intersectional line of the formed flat face 12 and the perpendicular face against the direction of growth lies in the <110> direction by the boat method. The ingot 11 is cut from the face (111) at the face inclining at 54.7 degrees against the flat face 12 to have the prescribed thickness. Commonly the angle is shifted from 54.7 degrees about at 0.5-5 degrees. The triangular wafers 13 obtained by the slant cutting are piled up to be integrated by an adhesive, and is ground to be round stick. After then, when it is broken in pieces again to obtain circular wafers 13', the end parts 14 having large dislocational density are removed, the homogeneous wafers having small dislocational density are obtained and the superior performance can be obtained.
Inventors:
KIMIE KIYOHIKO
Application Number:
JP808680A
Publication Date:
August 22, 1981
Filing Date:
January 26, 1980
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
B24B1/00; B24B9/06; H01L21/304; B28D5/00; C30B33/00; H01L29/06; (IPC1-7): H01L21/304