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Title:
MANUFACTURE OF COBALT ANTOMONIDE THERMOELECTRIC MATERIAL
Document Type and Number:
Japanese Patent JPH1140862
Kind Code:
A
Abstract:

To dispense with a grinding process, in which impurities such as oxygen and vessel material are liable to be mixed into cobalt antimonide thermoelectric material and to shorten a thermal treatment time or a sintering time by a method, wherein material is melted into a melt of prescribed composition, the melt is atomized and quench solidified into powder, and the power is sintered being compressed under a pressure higher than a specific value at a specific temperature.

Cobalt antimonide(CoSb3) thermoelectric material is formed of a CoSb3 compound of skutterudite crystal structure and contains unavoidable impurities and as necessary, a very small amount of additive impurities. This manufacturing method is composed of a first process, where material is melted into a melt of prescribed composition, and the melt is atomized and quench solidified into a powder by and a second process where the powder is sintered as being pressed into a sintered body. The power solidified by quenching is turned into CoSb3 or its substituent compound of single phase through a short heat treatment, so that the heat treatment can be carried out as a conventional sintering process, and a manufacturing process can be simplified. The sintered body is sintered at temperatures of 300 to 850°C and compressed under a pressure of 2 MPa or above.


Inventors:
NAKAGAWA HAMAZOU
KASAMA AKIO
TANAKA HISAO
TANIGUCHI MOTOMU
Application Number:
JP19585497A
Publication Date:
February 12, 1999
Filing Date:
July 22, 1997
Export Citation:
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Assignee:
YAMAGUCHI PREF GOV SANGYO GIJU
International Classes:
B22F3/14; C22C1/04; C22C12/00; H01L35/18; H01L35/34; (IPC1-7): H01L35/18; C22C1/04; C22C12/00; H01L35/34
Attorney, Agent or Firm:
Ishikawa Hideki



 
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