Title:
MANUFACTURE OF COMPOUND SEMICONDUCTOR CRYSTAL SUBSTRATE
Document Type and Number:
Japanese Patent JPS60210832
Kind Code:
A
Abstract:
PURPOSE:To enable the uniform formation of good compound semiconductor elements on an Si substrate by using a manufacturing method of absorbing the distorsion stress generating in a substrate by providing a section polycrystalline regions selectively. CONSTITUTION:A Ge layer 2 is evaporated as the intermediated layer over the Si substrate 1. At this time, the layer 2 turns into single crystal spontaneously by vapor-phase growth. Next, insulation film 3 are selectively formed in the part other than the region scheduled for compound semiconductor element formation on the layer 2. Then, a GaAs layer 4 is formed over the upper side of the films 3 and the layer 2 by the molecular ray epitaxial method, thereby changing the GaAs layer 4 on the layer 2 into a single crystal GaAs layer and the GaAs layer 5 on the film 3 into a polycrystalline GaAs layer. Distorsion stress generates in the crystal interface at every heat treatment during the above-mentioned manufacturing process; however, such a distorsion stress is properly absorbed by the layer 5 in the inactive region. Thereby, a compound active element 6 can be formed on the layer 4.
Inventors:
NONAKA TOSHIO
AKIYAMA MASAHIRO
AKIYAMA MASAHIRO
Application Number:
JP6582984A
Publication Date:
October 23, 1985
Filing Date:
April 04, 1984
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
H01L29/812; H01L21/20; H01L21/203; H01L21/338; (IPC1-7): H01L21/203; H01L29/80
Domestic Patent References:
| JPS4919028A | 1974-02-20 |
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