Title:
MANUFACTURE FOR COMPOUND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH04111476
Kind Code:
A
Abstract:
PURPOSE:To provide a flat formation of an InGaAs third compound semiconductor layer having a small, band gap and at the same time, prevent a contact between the third compound semiconductor layer and a dielectric film, e.g. an SiN film, by providing a second compound semiconductor layer serving as a mask with a canopy by making use of the side etching of a first compound semiconductor layer in a photodiode formation of a planar construction. CONSTITUTION:A recessed portion provided in a first compound semiconductor layer 13 is expanded by a side etching and there, an InGaAs third compound semiconductor layer 22 having a small band cap is embedded for growing a crystal. This enables the third compound semiconductor layer to be formed into a flat regrowth layer on conditions that no unusual growth comes about. Namely, of significance is that a second compound semiconductor layer 14 provided on the first compound semiconductor layer 13 is protruding as a canopy. Also, even in the growth of a fourth compound semiconductor layer 23, no unusual growth occurs by virtue of the canopy effect of a SiN film 15.
Inventors:
SADAMASA TETSUO
HIRAYAMA YUZO
HIRAYAMA YUZO
Application Number:
JP23008490A
Publication Date:
April 13, 1992
Filing Date:
August 31, 1990
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L31/10; H01L33/06; H01L33/14; H01L33/30; H01L33/40; H01L33/44; H01S5/00; (IPC1-7): H01L31/10; H01L33/00; H01S3/18
Attorney, Agent or Firm:
Takehiko Suzue (3 outside)