PURPOSE: To make it unnecessary particularly to supply, reacting excitation energy from outside in order to generate a deposited film, by introducing a gaseous raw material for the deposited film formation and a gaseous halogen group oxidizer having a property of oxidizing action to the raw material into a film formation space where a specific substrate is disposed in advance and bringing them in contact with each other.
CONSTITUTION: On a substrate 4 a thin film 5 whose nucleus formation density is small enough to enable selective nucleus formation is formed and thereon a heterogeneous material compared with a material to form the thin film 5 of the small nucleus formation density is deposited thin and a patterning process is performed by lithography or the like so that a nucleus formation surface (SNDL) 6 made of the heterogeneous material is formed fully fine. Successively, a crystalline pile film is formed by the selection of proper deposition conditions using a FOCVD method. Moreover, the nucleus grows as well as keeps single- crystal structural and becomes an island single-crystal grain 7 and more grows to enable the covering of the whole thin film 5. The single crystal 7A is flattened as needed by etching or polishing so that a desirable element is formed.
HIRAI YUTAKA (JP)
UEKI MASAO (JP)
SAKAI AKIRA (JP)
