MANUFACTURE OF DEVICE HAVING STRUCTURE ON SEMICONDUCTOR SUBSTRATE

Title:

MANUFACTURE OF DEVICE HAVING STRUCTURE ON SEMICONDUCTOR SUBSTRATE

Document Type and Number:

Japanese Patent JP2001113500

Kind Code:

A

Abstract:

To provide a method capable of manufacturing an optical switching element having a structure of resin in an upper part of an actuator.

Sacrifice layers 32, 34 when forming an actuator part 6 or a resin optical element part 3 are formed of amorphous silicon so that the sacrifice layers 32, 34 can be removed by fluorinated gas 48 without exerting influence on the optical element part 3 and a semiconductor substrate 20.

More Like This:

JP6247501	A manufacturing method of the integrated circuit device provided with the piezo-electricity type MEMS switch
JP2003266394	METHOD FOR FABRICATING SILICON DEVICE AND METHOD OF MANUFACTURING INK-JET TYPE RECORDING HEAD AND SILICON WAFER
JP2007069322	JIG FOR MOUNTING NANO PINCETTE UNIT, MOUNTING METHOD OF NANO PINCETTE UNIT USING JIG, AND TRANSFERRING HOLDER FOR NANO PINCETTE UNIT

Inventors:

TAKEDA TAKASHI
YONEKUBO MASATOSHI

Application Number:

JP29283799A

Publication Date:

April 24, 2001

Filing Date:

October 14, 1999

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SEIKO EPSON CORP

International Classes:

B81C1/00; B81B3/00; G02B26/08; (IPC1-7): B81C1/00; G02B26/08

Attorney, Agent or Firm:

Kisaburo Suzuki (2 outside)

Previous Patent: MANUFACTURING METHOD OF SEMICONDUCTOR SENSOR

Next Patent: UNIVERSAL LATHE FOR WOODWORKING