To obtain a dielectric capacitor having resistance against forming gas annealing so that the lower electrode is not oxidized, when the forming gas annealing is performed for the recovery of transistor characteristics, and the lower electrode is not reduced.

This manufacturing method of a dielectric capacitor provided with a lower electrode 23, consists of at least one kind selected from among Ir, Pd, Ru and Rh or containing at least one kind selected from these elements, a dielectric film 24 consisting of a ferroelectric or a high dielectric formed on the lower electrode 23, and an upper electrode 25 formed on the dielectric film 24. After the formation of the dielectric film 24 by performing the first heat treatment process in an oxygen containing gas atmosphere, another heat treatment is performed by a second heat treatment process at a temperature higher than that of the first heat treatment in an inert gas atmosphere.