MANUFACTURE OF DIELECTRIC THIN FILM AND DIELECTRIC CAPACITOR AND DIELECTRIC MEMORY

Japanese Patent JPH11163273

A

To provide a dielectric capacitor which exhibits good crystal properties and is adaptable to micromachining, by provisionally firing a dielectric coating film at a temperature lower than a crystallizing temperature of the dielectric material, forming a provisional electrode, crystallizing the dielectric coating film by firing, eliminating the provisional electrode and forming an upper electrode which is adaptable to a micromachining.

First, a substrate such as Si wafer is oxidized to form a Si oxide film 3 on the substrate and a lower electrode 4 is formed on the Si oxide film 3. Then a dielectric coating film 5' is formed on the lower electrode 4 and is heated at a temperature lower than the crystallizing temperature of the dielectric material and is provisionally fired. A provisional electrode 6 is formed on the coating film after provisional firing. The dielectric coating film 5' is heated at a temperature for crystallizing the dielectric material for firing. The dielectric coating film 5' is crystallized to form a dielectric coating film 5 having a crystal structure. Consecutively, the provisional electrode 6 is eliminated from the crystallized coating film 5 to form a dielectric thin film 1. Then an upper electrode 7 is formed on the dielectric thin film 1 to manufacture a dielectric capacitor 10.

SAWADA YOSHIHIRO
HASHIMOTO AKIRA
KOIWA ICHIRO
OKADA YUKIHISA
KANEHARA TAKAO
KATOU HIROYO

JP34578497A

June 18, 1999

December 01, 1997

Click for automatic bibliography generation  

TOKYO OHKA KOGYO CO LTD
OKI ELECTRIC IND CO LTD

C04B35/00; C04B35/495; H01B3/00; H01B19/00; H01G4/33; H01L21/822; H01L27/04; (IPC1-7): H01L27/04; C04B35/495; H01B3/00; H01B19/00; H01L21/822

Yoko Hasegawa

Previous Patent: MICROWAVE CIRCUIT

Next Patent: FORMING OF CAPACITOR USING HEMISPHERICAL GRAIN SILICON LAYER THROUGH SELECTIVE EVAPORATION PROCESS