Title:
MANUFACTURE OF ELECTRIC-MECHANICAL DISPLACEMENT CONVERSION ELEMENT
Document Type and Number:
Japanese Patent JPH04186784
Kind Code:
A
Abstract:
PURPOSE:To offer an electric-mechanical displacement conversion element, which is highly efficient and small in property dispersion, by forming two single- crystal silicon layers, at low temperature, on a single-crystal silicon substrate. CONSTITUTION:An i-type or n-type amorphous silicon layer 10 and a p-type amorphous silicon layer 103 are formed on the surface of p-type single-crystal silicon substrate 101. And heat treatment is performed, and with the p-type single-crystal silicon substrate 101 as a seed, the amorphous silicon layers 102 and 1-3 are polycrystallized. And it is patterned from the side of the polycrystallized p-type silicon layer 103. After forming the mask for etching by resist or the like, the p-type silicon layer 103 is etched in the mixed aqueous solution of hydrofluoric acid and sulfuric acid to expose the i-type or n-type silicon layer 102. And the 102 is etched in the aqueous solution of ethylene diamine and pyrocatechol to form a hollow 104 and an overhang above it, and the mask for etching is exfoliated.
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Inventors:
HASEGAWA KAZUMASA
Application Number:
JP31540190A
Publication Date:
July 03, 1992
Filing Date:
November 20, 1990
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L41/08; (IPC1-7): H01L41/08
Attorney, Agent or Firm:
Kisaburo Suzuki (1 outside)