To provide a manufacturing method epitaxial wafer with high- productivity, wherein steep and stable resistivity profile can be produced with narrow transition width.

In method for gas phase growth of a desired silicon single crystal layer 3 on a silicon single crystal 1 placed in a reaction vessel 1, a process in which after a protective film 4 of a silicon single crystal thin film is gas-phase-grown on the silicon single crystal 1, the inside of the reaction vessel is dry-etched, while the silicon single crystal 1 on which the protective layer 4 is gas-phase-grown is housed in the reaction vessel, a process for purging inside the reaction vessel, and a process where the desired silicon single crystal layer 3 is gas-phase-grown, are provided.