Title:
Ｍｇ２Ｓｉ１−ｘＳｎｘ多結晶体の製造装置および製造方法
Document Type and Number:
Japanese Patent JP5882195
Kind Code:
B2
Abstract:
Provided are an apparatus and a method for producing an inexpensive Mg 2 Si 1-x Sn x polycrystal that can be effectively used as thermoelectric conversion materials that can be expected to have a high performance index by doping if necessary. A problem can be solved by a production apparatus 1 for producing an Mg 2 Si 1-x Sn x polycrystal including at least a reaction vessel for synthesis of Mg 2 Si 1-x Sn x represented by the following formula (1) by filling a mixture of Mg particles and Si particles or Mg particles and Sn particles, or Mg-Si alloy particles or Mg-Sn alloy particles as a main starting material 2 to cause a reaction; an inorganic fiber layer 6 which is fixedly provided above the starting material 2 filled into the reaction vessel 3 and has air permeability, which can be caused to disappear by a product 7 generated by chemical reaction of vaporized Mg with oxygen during the synthesis of the polycrystal 12; heating means 8 for heating the reaction vessel 3; and control means 9 for controlling the heating temperature and heating time of the reaction vessel 3, wherein
Mg 2 Si 1-x Sn x (1)
(in the formula (1), x is 0 to 1).
Inventors:
Udono Haruhiko
Hirohiko Mito
Hirohiko Mito
Application Number:
JP2012505788A
Publication Date:
March 09, 2016
Filing Date:
March 16, 2011
Export Citation:
Assignee:
National University Corporation Ibaraki University
Showa kde Co., Ltd.
Showa kde Co., Ltd.
International Classes:
C01B33/06; B22F1/12; C22C23/00
Domestic Patent References:
| JP2006128235A | 2006-05-18 | |||
| JP2006124728A | 2006-05-18 | |||
| JP2005133202A | 2005-05-26 | |||
| JP2006128235A | 2006-05-18 | |||
| JP2006124728A | 2006-05-18 | |||
| JP2005133202A | 2005-05-26 |
Attorney, Agent or Firm:
Teruo Akimoto