PURPOSE: To position the source and drain electrodes with high accuracy by utilizing the characteristics of the surface-orientation dependence of the chemical etching of a dummy gate consisting of a single crystal.

CONSTITUTION: An active layer 2 is formed onto a GaAs substrate 1. A single crystal GaAs dummy gate 3, a section thereof takes an inverted trapezoid, is shaped through anisotropic etching by using an etching mask 4'. The mask 4' is removed and the gate 3 is employed as a mask, and AuGe/Au 5 is evaporated to form source and drain electrodes through self-alignment. A negative type resist 6 is applied, and etched up to the top of the gate. The gate 3 is removed, and the layer 2 is etched to shape an opening section 10. Al 7 is evaporated, the gate is self-aligned and lifted off, and a surface protective film 8 is attached and patterned. According to said manufacture, the positions of the source and drain electrodes can be determined precisely, and the gate, a source and a drain can be self-aligned easily.