Title:
MANUFACTURE OF FIELD EMISSION CATHODE
Document Type and Number:
Japanese Patent JP3239285
Kind Code:
B2
Abstract:
PURPOSE: To improve a yield when a field emission cathode element is manufactured.
CONSTITUTION: An (n) or (p) type amorphous silicon layer 122 having a resistivity of 102Ω/cm-104Ω/cm degree is vapor-deposited on the upper surface of a substrate 121 of glass, etc., to irradiate a laser beam to the given region of this layer to perform annealing treatment. An annealed region can by polycrystallized from an amorphous condition to be changed into a cathode region 123 having resistivity near to that of a conductor. When an insulating layer 124 and a gate electrode layer 125 are formed into films on the upper surface of this (n) or (p) type amorphous silicon layer 122, the respective layers of a laminated substrate for manufacturing an FEC can be flattened to eliminate the crack of a gate electrode apt to be generated an FEC manufacturing process.
Inventors:
Takehiro Niiyama
Teruo Watanabe
Shigeo Ito
Waka Ohtsu
Teruo Watanabe
Shigeo Ito
Waka Ohtsu
Application Number:
JP31397293A
Publication Date:
December 17, 2001
Filing Date:
November 22, 1993
Export Citation:
Assignee:
Futaba Electronics Co., Ltd.
International Classes:
H01J9/02; H01J1/30; H01J1/304; (IPC1-7): H01J9/02
Domestic Patent References:
| JP4229922A | ||||
| JP714500A |
Attorney, Agent or Firm:
Atsuo Waki (1 person outside)