To provide a manufacturing method of a field emission cold cathode having a fine gate diameter exceeding the resolution in photolithography.

A first insulating layer 2 is grown on a silicon substrate 1 and a second insulating layer 3 is deposited thereon. An opening is formed after the application of photoresist to the whole surface, which acts as a mask to etch the layer 3, 2. Forming films so that emitter material is vertically implanted to the substrate 1, an emitter lower layer 5a is deposited on the substrate 1 and a first deposited layer 6a is deposited on the layer 3. Sacrifice layer material is deposited from the oblique direction with the substrate 1 rotating about an axis vertical to the substrate 1 to form a sacrifice layer 7. While a second deposited layer is deposited on the layer 7, an emitter upper layer is deposited. Finally, alumina in the layer 7 is selectively etched by phosphoric acid to lift-off the second deposited layer.