To provide the production method of a field emission type electron source, capable of realizing high density of emitters in a sure production process and enhancing the degrees freedom of emitter material selection.

A negative photoresist film 126 on a substrate 121 is exposed by a two luminous flux interference exposure method, for example, then developed to produce holes in a photoresist film 126, and an emitter 129 is formed by using the holes produced. By using the sure production process of the two luminous flux interference exposure method, high density of emitters is realized. The emission current stability, redundancy, and the density of a field emission type electron source produced are enhanced, and the degrees of freedom for the emitter material selection is also enhanced.