PURPOSE: To improve crack resistance and moisture resistance when an SiO2 film is heated, by exposing a film, which is formed on a semiconductor substrate and includes silicon oxide to gas plasma including F, thereby efficiently doping F into the SiO2.
CONSTITUTION: A film, which includes silicon oxide, e.g., an SiO2 film, is provided on a substrate. Thereafter, the film is exposed to a gas including F. It is desirable that the gas including F is in a plasma state. As the film on the substrate, a film, on which silica or applying type glass 9 (SOG) liquid is applied, can be used. At this time, said film is exposed in the gas or plasma including F after the silica film is provided or the SOG solution is applied before a final heat treatment. The temperature of the film is gradually increased from room temperature to a final baking temperature (100W1,200°C). During this period, it is desirable that the film is exposed to the plasma or the gas. Thus, the yield of cracks in the glass film during the baking after the plasma treatment is prevented, and the thickness of the glass film is increased.
OKUDAIRA SADAYUKI
HONMA YOSHIO
MUKAI KIICHIRO
