Title:
MANUFACTURE OF FILM SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2988483
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form an excellent gate oxide film by thermal oxidation method, by inserting a substrate into an oxidizing furnace so that the surface temperature of a substrate where a silicon film is made may go up at a specified temperature rise speed or under.
SOLUTION: An Si film 1-2 of a nonsingle crystalline semiconductor film is grown on insulating amorphous material 1-1. Then, a gate oxide film 1-4 is made by thermal oxidation method, but at this time, the temperature of an oxidizing furnace for insertion is set to an ultralow temperature of, for example, 600°C. Then, the substrate insertion speed is set so that the temperature rise speed at the surface of the substrate until reach to the center of the oxidizing furnace of the substrate may be 20°C/min. or under. After that, the temperature of oxidizing furnace is raised to a specified oxidation temperature at a temperature rise speed of 20°C/min. or under. According to this constitution, the oxidizing reaction progresses slowly, so there is very little distortion, and a gate oxide film excellent in Si/SiO2 interface property can be made.
Inventors:
Takenaka, Satoshi
Application Number:
JP1999000186639
Publication Date:
October 08, 1999
Filing Date:
September 27, 1990
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/316; H01L21/336; H01L29/786; (IPC1-7): H01L29/786; H01L21/316; H01L21/336