PURPOSE: To decide the optimum reflection preventing film that suppresses the standing wave effects and forms a fine pattern with high accuracy, manufacture a fine pattern using such reflection preventing film and manufacture a semiconductor device using such fine pattern manufacture by using a method for manufacturing a fine pattern on the surface of a base board using KrF excimer beams or beams with shorter wavelength.

CONSTITUTION: A method for manufacturing a fine pattern on the surface of a base board 20 using KrF excimer beams or shorter beams is provided. A reflection preventing film 22 with the refraction factor (n)=1.0-5.5 and the extinction coefficient (k)=0.0-1.5 is formed on the surface of the base board 20. A resist film 24 is formed on the reflection preventing film 22 and the resist film 24 is processed into a fine pattern by photolithography using KrF excimer beams or beams with shorter wavelength.