Title:
MANUFACTURE OF GAAS SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH01137624
Kind Code:
A
Abstract:
PURPOSE:To control the diffusion rate of Ga and avoid the sputtering of As from a GaAs substrate by a method wherein a double-layer film composed of a lower SiO2 film and an upper SiN film is used as an anneal protection film and the ion implantation layer of a GaAs semiconductor device is annealed. CONSTITUTION:A photoresist pattern 2 is formed on the surface of a GaAs substrate 1. Si ions are implanted with the pattern 2 as a mask. An n-type or n<+> type ion implantation layer 3 is selectively formed in the substrate 1. After the pattern 2 is removed, an SiO2 film 4 is formed over the whole surface of the substrate 1 as a lower layer film of an anneal protection film. An SiN film 5 is formed on the SiO2 film 4 as an upper layer film of the annealing protection film. After the anneal protection film with a double-layer structure is formed, the ion implantation layer 3 is annealed. The SiN film 5 and the SiO2 film 4 are removed with fluoric acid or by dry etching. With this constitution, the diffusion rate of Ga can be controlled and the sputtering of As from the substrate 1 can be avoided.
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Inventors:
KASASHIMA MASAAKI
Application Number:
JP29537287A
Publication Date:
May 30, 1989
Filing Date:
November 25, 1987
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/265; H01L21/324; (IPC1-7): H01L21/265; H01L21/324
Attorney, Agent or Firm:
Hiroshi Kikuchi
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